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OLED display panel and OLED display

專利號
US10868098B2
公開日期
2020-12-15
申請人
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.(CN Wuhan)
發(fā)明人
Caiqin Chen
IPC分類
H01L27/32; H01L51/52; H01L51/56
技術(shù)領(lǐng)域
layer,insulating,metal,electrode,anode,sd,oled,silicon,disposed,ge1
地域: Wuhan

摘要

An OLED display panel and an OLED display are provided. The OLED display panel includes a substrate, and a first gate electrode layer, a source drain (SD) metal layer, and an anode metal layer that are disposed on the substrate. The first gate electrode layer faces a part of the SD metal layer and/or a part of the anode metal layer to form a compensating capacitor therebetween. This is beneficial in a reduction in process flow.

說明書

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RELATED APPLICATIONS

This application is a National Phase of PCT Patent Application No. PCT/CN2018/100465 having International filing date of Aug. 14, 2018, which claims the benefit of priority of Chinese Patent Application No. 201810549841.6 filed on May 31, 2018. The contents of the above applications are all incorporated by reference as if fully set forth herein in their entirety.

FIELD AND BACKGROUND OF THE INVENTION

The present disclosure relates to display technologies, and more particularly, to an organic light emitting diode (OLED) display panel and an OLED display.

In a display region of an active-matrix organic light emitting diode (AMOLED) display device, pixels are arranged into a matrix form including a plurality of rows and a plurality of columns. Each pixel is usually made up of two thin-film transistors and one capacitor, generally called a 2T1C circuit. The 2T1C design is sensitive to the following factors: threshold voltage (Vth) and channel mobility of the TFTs, starting voltage and quantum efficiency of the OLEDs, and transients of power supply. Accordingly, compensating circuits such as 7T1C, 6T1C, and 6T2C, are generally adopted to reduce the impacts.

In the compensating circuits used in the pixels, capacitors are used to keep the potential to drive the TFT and compensate the potential. A compensating capacitor formed between two gate electrode layers is generally used in this field. However, the use of two gate electrode layers makes process flow become more complicated, and this is not good at decreasing cost.

Therefore, there is a need to improve the drawbacks in the existing arts.

SUMMARY OF THE INVENTION

權(quán)利要求

1
What is claimed is:1. An organic light emitting diode (OLED) display panel, comprising a substrate, and a first gate electrode layer, a source drain (SD) metal layer, and an anode metal layer that are disposed on the substrate, wherein the SD metal layer forms a source electrode, a drain electrode, and a first metal member that are separated from each other, and the first metal member faces the first gate electrode layer to form a first compensating capacitor therebetween,wherein the OLED display panel further comprises a first insulating layer, a second insulating layer, a polycrystalline silicon layer, a third insulating layer, a fourth insulating layer, and a fifth insulating layer;the first insulating layer is disposed on the substrate, the polycrystalline silicon layer is disposed on the first insulating layer, and the second insulating layer is disposed on the polycrystalline silicon layer and the first insulating layer;the first gate electrode layer is disposed on the second insulating layer, the third insulating layer is disposed on the first gate electrode layer and the second insulating layer, the SD metal layer is disposed on the third insulating layer, the fourth insulating layer is disposed on the SD metal layer and the third insulating layer, the anode metal layer is disposed on the fourth insulating layer, and the fifth insulating layer is disposed on the anode metal layer and the fourth insulating layer.2. The OLED display panel according to claim 1, wherein the anode metal layer comprises an anode metal and a second metal member that are separated from each other; the first metal member faces the second metal member to form a second compensating capacitor therebetween.3. The OLED display panel according to claim 1, wherein a source electrode via and a drain electrode via are disposed in the second insulating layer and the third insulating layer, the source electrode of the SD metal layer is electrically connected to the polycrystalline silicon layer through the source electrode via, and the drain electrode of the SD metal layer is electrically connected to the polycrystalline silicon layer through the drain electrode via.4. The OLED display panel according to claim 1, wherein an anode via is disposed in the fourth insulating layer, and the anode metal layer is electrically connected to the SD metal layer through the anode via.5. The OLED display panel according to claim 1, wherein the fifth insulating layer is perforated to form a first via;the OLED display panel further comprises a light emitting layer and a cathode layer;the light emitting layer is disposed on the fifth insulating layer and the cathode layer is disposed on the light emitting layer;the light emitting layer is electrically connected to the anode metal layer through the first via.6. The OLED display panel according to claim 1, wherein the first insulating layer, the second insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer are a silicon dioxide layer or a silicon nitride layer.7. An organic light emitting diode (OLED) display panel, comprising a substrate, and a first gate electrode layer, a source drain (SD) metal layer, and an anode metal layer that are disposed on the substrate, wherein the anode metal layer comprises an anode metal and a metal member that are separated from each other, and the metal member of the anode metal layer faces the gate electrode layer to form a compensating capacitor therebetween,wherein the OLED display panel further comprises a first insulating layer, a second insulating layer, a polycrystalline silicon layer, a third insulating layer, a fourth insulating layer, and a fifth insulating layer;the first insulating layer is disposed on the substrate, the polycrystalline silicon layer is disposed on the first insulating layer, and the second insulating layer is disposed on the polycrystalline silicon layer and the first insulating layer;the first gate electrode layer is disposed on the second insulating layer, the third insulating layer is disposed on the first gate electrode layer and the second insulating layer, the SD metal layer is disposed on the third insulating layer, the fourth insulating layer is disposed on the SD metal layer and the third insulating layer, the anode metal layer is disposed on the fourth insulating layer, and the fifth insulating layer is disposed on the anode metal layer and the fourth insulating layer.8. The OLED display panel according to claim 7, wherein a source electrode via and a drain electrode via are disposed in the second insulating layer and the third insulating layer, the source electrode of the SD metal layer is electrically connected to the polycrystalline silicon layer through the source electrode via, and the drain electrode of the SD metal layer is electrically connected to the polycrystalline silicon layer through the drain electrode via.9. The OLED display panel according to claim 7, wherein an anode via is disposed in the fourth insulating layer, and the anode metal layer is electrically connected to the SD metal layer through the anode via.10. The OLED display panel according to claim 7, wherein the fifth insulating layer is perforated to form a first via;the OLED display panel further comprises a light emitting layer and a cathode layer;the light emitting layer is disposed on the fifth insulating layer and the cathode layer is disposed on the light emitting layer;the light emitting layer is electrically connected to the anode metal layer through the first via.11. The OLED display panel according to claim 7, wherein the first insulating layer, the second insulating layer, the third insulating layer, the fourth insulating layer, and the fifth insulating layer are a silicon dioxide layer or a silicon nitride layer.12. An organic light emitting diode (OLED) display, comprising an OLED display panel, the OLED display panel comprising:a substrate, and a first gate electrode layer; a source drain (SD) metal layer, and an anode metal layer that are disposed on the substrate; wherein the SD metal layer forms a source electrode, a drain electrode, and a first metal member that are separated from each other, and the first metal member faces the first gate electrode layer to form a first compensating capacitor therebetween,wherein the OLED display panel further comprises a first insulating layer, a second insulating layer, a polycrystalline silicon layer, a third insulating layer, a fourth insulating layer, and a fifth insulating layer;the first insulating layer is disposed on the substrate, the polycrystalline silicon layer is disposed on the first insulating layer, and the second insulating layer is disposed on the polycrystalline silicon layer and the first insulating layer;the first gate electrode layer is disposed on the second insulating layer, the third insulating layer is disposed on the first gate electrode layer and the second insulating layer, the SD metal layer is disposed on the third insulating layer, the fourth insulating layer is disposed on the SD metal layer and the third insulating layer, the anode metal layer is disposed on the fourth insulating layer, and the fifth insulating layer is disposed on the anode metal layer and the fourth insulating layer.13. The OLED display according to claim 12, wherein the anode metal layer comprises an anode metal and a second metal member that are separated from each other; the first metal member faces the second metal member to form a second compensating capacitor therebetween.
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