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Display apparatus

專利號(hào)
US10868101B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
SAMSUNG DISPLAY CO., LTD.（KR Yongin-si）
發(fā)明人
Kiwook Kim; Kwangmin Kim; Yangwan Kim; Jisu Na; Minwoo Byun
IPC分類
H01L21/00; H01L27/32; H01L51/52
技術(shù)領(lǐng)域
vss,electrode,insulating,layer,second,first,ep2,supply,line,in
地域： Yongin-si

摘要

A display apparatus includes a substrate, a wire having an inner edge including first and second portions, a first insulating layer covering a portion of the substrate, and a second insulating layer. The portion of the substrate covered by the first insulating layer is closer to a center of the substrate than the wire, the first insulating layer covers a part of the first portion of the wire and a part of the second portion of the wire, and a first end of the first insulating layer is disposed on the wire. The second insulating layer covers the first insulating layer and has a second end disposed on the wire. A distance between the first end and the second end covering the first portion of the wire is different from a distance between the first end and the second end covering the second portion of the wire.

說(shuō)明書

For example, as illustrated in FIG. 9, which is a cross-sectional view of the display apparatus of FIG. 1 taken along line A-A′ of FIG. 1 and line B-B′ of FIG. 2 according to an exemplary embodiment, and FIG. 10, which corresponds to FIG. 9 and is a cross-sectional view of the display apparatus of FIG. 1 taken along lines B-B′ and C-C′ of FIG. 2 according to an exemplary embodiment, a second gate insulating layer 122 covering the first gate electrode 213 of the first thin-film transistor 210 is further provided in addition to the first gate insulating layer 121, and the second gate electrode 223 of the second thin-film transistor 220 may be provided on the second gate insulating layer 122.

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