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Trench capacitor and method of forming the same

專利號
US10868107B2
公開日期
2020-12-15
申請人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.(TW Hsinchu)
發(fā)明人
Tao-Cheng Liu; Shih-Chi Kuo; Tsai-Hao Hung; Tsung-Hsien Lee
IPC分類
H01L49/02; H01L21/768; H01L29/94; H01L27/08
技術(shù)領域
trench,layer,dielectric,conductive,capacitor,in,substrate,layers,ild,some
地域: Hsinchu

摘要

Methods of manufacturing trench capacitors include forming a trench opening in a substrate, depositing a first dielectric layer over a sidewall and a bottom surface of a first trench opening in a substrate, and depositing a first conductive layer over the first dielectric layer. The first dielectric layer and the first conductive layer are then planarized to expose a planarized top surface of the substrate and a planarized top surface of the first conductive layer in the first trench opening. An ILD layer is deposited over the planarized top surface of the substrate and over the planarized surface of the first conductive layer. A first electrical contact is formed through the ILD layer to provide an electrical connection to the first conductive layer within the first trench opening.

說明書

FIGS. 2A-2M are cross-sectional views of a semiconductor device at various stages of production in accordance with some embodiments.

FIG. 3 is a flow chart of a method of forming a semiconductor device in accordance with some embodiments.

FIG. 4 is a flow chart of a method of forming a semiconductor device in accordance with some embodiments.

FIG. 5 is a flow chart of a method of forming a semiconductor device in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components, values, operations, materials, arrangements, or the like, are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. Other components, values, operations, materials, arrangements, or the like, are contemplated. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

權(quán)利要求

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