The first conductivity type contact 411″ is formed in the first conductivity type well 411′, and has the first conductivity type. The first conductivity type contact 411″ is located below the top surface 41a and in contact with the top surface 41a in the vertical direction, to serve as an electrical contact of the first conductivity type well 411′. The second conductivity type contact 412″ is formed in the second conductivity type well 412′, and has the second conductivity type. The second conductivity type contact 412″ is located below the top surface 41a and in contact with the top surface 41a in the vertical direction, to serve as an electrical contact of the second conductivity type well 412′.

The body region 46 is formed in the first high voltage well 42 within the device region 43a, and has the first conductivity type. The body region 46 is located below the top surface 41a and in contact with the top surface 41a in the vertical direction. The body contact 46′ is formed in the body region 46, and has the first conductivity type. The body contact 46′ is located below the top surface 41a and in contact with the top surface 41a in the vertical direction, to serve as an electrical contact of the body region 46. The deep well column 45 is formed in the first high voltage well 42 within the device region 43a, and has the first conductivity type. The deep well column 45 is in contact with the deep well 411, and is electrically connected to the deep well 411, but is not in contact with the top surface 41a in the vertical direction.