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High voltage device and manufacturing method thereof

專利號
US10868115B2
公開日期
2020-12-15
申請人
RICHTEK TECHNOLOGY CORPORATION（TW Zhubei）
發(fā)明人
Tsung-Yi Huang; Chu-Feng Chen
IPC分類
H01L29/06; H01L29/66; H01L29/78; H01L21/762
技術(shù)領(lǐng)域
in,voltage,layer,contact,region,deep,well,type,top,drift
地域： Zhubei

摘要

A high voltage device includes: a semiconductor layer, an isolation region, a deep well, a buried layer, a first high voltage well, a first conductivity type well, a second high voltage well, a body region, a body contact, a deep well column, a gate, a source and a drain. The deep well column is located between the drain and a boundary of the conductive layer which is near the source in a channel direction. The deep well column is a minority carriers absorption channel, to avoid turning ON a parasitic transistor in the high voltage device.

說明書

The present invention has been described in considerable detail with reference to certain preferred embodiments thereof. It should be understood that the description is for illustrative purpose, not for limiting the scope of the present invention. Those skilled in this art can readily conceive variations and modifications within the spirit of the present invention. The various embodiments described above are not limited to being used alone; two embodiments may be used in combination, or a part of one embodiment may be used in another embodiment. For example, other process steps or structures, such as a threshold voltage adjustment region, may be added. For another example, the lithography process step is not limited to the mask technology but it can also include electron beam lithography, immersion lithography, etc. Therefore, in the same spirit of the present invention, those skilled in the art can think of various equivalent variations and various combinations, and there are many combinations thereof, and the description will not be repeated here. The scope of the present invention should include what are defined in the claims and the equivalents.

權(quán)利要求

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