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Method for forming apparatus comprising two dimensional material

專利號
US10868121B2
公開日期
2020-12-15
申請人
Nokia Technologies Oy(FI Espoo)
發(fā)明人
Darryl Cotton; Yinglin Liu; Adam Robinson; Alexander Bessonov; Richard White
IPC分類
H01L29/16; H01L29/66; H01L29/778; H01L31/028; H01L29/12; H01L29/06; H01L29/417; H01L29/423; G01N27/414; H01L31/112
技術領域
mouldable,layer,graphene,material,release,may,polymer,electrodes,two,be
地域: Espoo

摘要

A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (35), and at least two, preferably three, electrodes (25); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer (24, 26, 28) overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity (29) between the mouldable polymer (26) and the layer of two dimensional material (23).

說明書

RELATED APPLICATION

This application was originally filed as PCT Application No. PCT/FI2016/050550 filed Aug. 5, 2016 which claims priority benefit from EP Patent Application No. 15182976.9 filed Aug. 28, 2015.

TECHNOLOGICAL FIELD

Examples of the disclosure relate to a method for forming apparatus comprising two dimensional material. In particular, they relate to a method for forming electronic apparatus comprising a two dimensional material such as graphene.

BACKGROUND

Apparatus comprising two dimensional materials such as graphene are well known. For instance graphene can be provided in devices such as resistive sensors or field effect transistors to enable parameters such as chemicals or light to be detected. In other devices graphene field effect transistors can be used as logic elements or other electronic components.

It is useful to provide improved methods of forming such devices.

BRIEF SUMMARY

According to various, but not necessarily all, examples of the disclosure there may be provided a method comprising: forming a layer of two dimensional material on a first release layer; forming at least two electrodes; forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing mouldable polymer overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a discontinuity between the mouldable polymer and the layer of two dimensional material.

In some examples the discontinuity may set the layer of two dimensional material and the mouldable polymer apart from each other.

權利要求

1
We claim:1. A method comprising:forming a layer of material on a first release layer;forming at least two electrodes on the first release layer;forming a second release layer overlaying at least a portion of the layer of material, wherein the second release layer is formed so that at least part of the second release layer contacts the first release layer;providing mouldable polymer overlaying at least part of the at least two electrodes respectively, and the second release layer, wherein the mouldable polymer is a non-metallic polymer; andremoving the first release layer and removing the second release layer to provide a cavity between the mouldable polymer and the layer of material.2. A method as claimed in claim 1 wherein the cavity sets the layer of material and the mouldable polymer apart from each other.3. A method as claimed in claim 1 comprising providing dielectric overlaying at least a portion of the layer of material.4. A method as claimed in claim 1 comprising providing an inert material in the cavity.5. A method as claimed in claim 1 comprising providing nitrogen in the cavity.6. A method as claimed in claim 1 wherein the layer of material and the at least two electrodes form at least part of a field effect transistor.7. A method as claimed in claim 6 wherein the field effect transistor comprises a gate electrode and the gate electrode is provided adjacent to the layer of material.8. A method as claimed in claim 6 wherein the wherein the field effect transistor comprises a gate electrode and the gate electrode is provided overlapping at least part of the layer of material.9. A method as claimed in claim 1 comprising providing a rigid portion aligned with the cavity, wherein the rigid portion is arranged to prevent the cavity from bending or otherwise deforming.10. A method as claimed in claim 1 wherein the material comprises graphene.11. A method as claimed in claim 1 comprising activating the layer of material.12. A method as claimed in claim 1 comprising activating the layer of material with quantum dots.13. An apparatus formed by:forming a layer of material on a first release layer;forming at least two electrodes on the first release layer;forming a second release layer overlaying at least a portion of the layer of material, wherein the second release layer is formed so that at least part of the second release layer contacts the first release layer;providing mouldable polymer overlaying at least part of the at least two electrodes respectively, and the second release layer, wherein the mouldable polymer is a non-metallic polymer; andremoving the first release layer and removing the second release layer to provide a cavity between the mouldable polymer and the layer of material.
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