In the examples of FIGS. 3A to 3I the apparatus 21 comprises a bottom gate FET. It is to be appreciated that the methods could be modified to provide an apparatus 21 comprising a top gate FET. For instance the gate electrode of the top gate FET could be deposited on the surface of the moldable polymer 27 after the first release layer 33 has been removed. Other apparatus 21 could be formed using other similar methods.

FIG. 4 is a plan view of another example apparatus 21. The example apparatus of FIG. 4 may be formed using the methods described above. The apparatus 21 comprises a layer of two dimensional material 23, a plurality of electrodes 25 moldable polymer 27 and a discontinuity 29 which may be as described above. Corresponding reference numerals are used for corresponding features. The plurality of electrodes 25 and the layer of two dimensional material 23 are arranged to form an FET.