In some examples the method may comprise providing a dielectric overlaying at least a portion of the layer of two dimensional material.

In some examples the second release layer may be formed so that at least part of the second release layer contacts the first release layer.

In some examples the method may comprise providing an inert material in the discontinuity.

In some examples the method may comprise providing nitrogen in the discontinuity.

In some examples the layer of two dimensional material and the at least two electrodes may form at least part of a field effect transistor. The field effect transistor may comprise a gate electrode and the gate electrode may be provided adjacent to the layer of two dimensional material. The field effect transistor may comprise a gate electrode and the gate electrode may be provided overlapping at least part of the layer of two dimensional material.

In some examples the method may comprise providing a rigid portion aligned with the discontinuity.

In some examples the two dimensional material may comprise graphene.

In some examples the method may comprise activating the layer of two dimensional material.

In some examples the method may comprise activating the layer of two dimensional material with quantum dots.

According to various, but not necessarily all, examples of the disclosure there may be provided an apparatus formed by any of the methods described above.