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Method for forming apparatus comprising two dimensional material

專利號
US10868121B2
公開日期
2020-12-15
申請人
Nokia Technologies Oy(FI Espoo)
發(fā)明人
Darryl Cotton; Yinglin Liu; Adam Robinson; Alexander Bessonov; Richard White
IPC分類
H01L29/16; H01L29/66; H01L29/778; H01L31/028; H01L29/12; H01L29/06; H01L29/417; H01L29/423; G01N27/414; H01L31/112
技術(shù)領(lǐng)域
mouldable,layer,graphene,material,release,may,polymer,electrodes,two,be
地域: Espoo

摘要

A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (35), and at least two, preferably three, electrodes (25); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer (24, 26, 28) overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity (29) between the mouldable polymer (26) and the layer of two dimensional material (23).

說明書

According to various, but not necessarily all, examples of the disclosure there may be provided an apparatus comprising: a layer of two dimensional material and at least two electrodes wherein the layer of two dimensional material was formed on a first release layer;

    • mouldable polymer overlaying the at least two electrodes; and a discontinuity between the mouldable polymer and the layer of two dimensional material wherein the discontinuity is formed by a second release layer which has been removed.

In some examples the discontinuity may set the layer of two dimensional material and the mouldable polymer apart from each other.

In some examples the apparatus may comprise a dielectric overlaying at least a portion of the layer of two dimensional material.

In some examples the second release layer may be formed so that at least part of the second release layer contacts the first release layer.

In some examples the apparatus may comprise an inert material in the discontinuity.

In some examples the apparatus may comprise nitrogen in the discontinuity.

In some examples wherein the layer of two dimensional material and the at least two electrodes may form at least part of a field effect transistor. The field effect transistor may comprise a gate electrode and the gate electrode may be provided adjacent to the layer of two dimensional material. The field effect transistor may comprise a gate electrode and the gate electrode may be provided overlapping at least part of the layer of two dimensional material.

權(quán)利要求

1
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