According to various, but not necessarily all, examples of the disclosure there may be provided an apparatus comprising: a layer of two dimensional material and at least two electrodes wherein the layer of two dimensional material was formed on a first release layer;
In some examples the discontinuity may set the layer of two dimensional material and the mouldable polymer apart from each other.
In some examples the apparatus may comprise a dielectric overlaying at least a portion of the layer of two dimensional material.
In some examples the second release layer may be formed so that at least part of the second release layer contacts the first release layer.
In some examples the apparatus may comprise an inert material in the discontinuity.
In some examples the apparatus may comprise nitrogen in the discontinuity.
In some examples wherein the layer of two dimensional material and the at least two electrodes may form at least part of a field effect transistor. The field effect transistor may comprise a gate electrode and the gate electrode may be provided adjacent to the layer of two dimensional material. The field effect transistor may comprise a gate electrode and the gate electrode may be provided overlapping at least part of the layer of two dimensional material.