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Method for forming apparatus comprising two dimensional material

專利號(hào)
US10868121B2
公開日期
2020-12-15
申請(qǐng)人
Nokia Technologies Oy(FI Espoo)
發(fā)明人
Darryl Cotton; Yinglin Liu; Adam Robinson; Alexander Bessonov; Richard White
IPC分類
H01L29/16; H01L29/66; H01L29/778; H01L31/028; H01L29/12; H01L29/06; H01L29/417; H01L29/423; G01N27/414; H01L31/112
技術(shù)領(lǐng)域
mouldable,layer,graphene,material,release,may,polymer,electrodes,two,be
地域: Espoo

摘要

A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (35), and at least two, preferably three, electrodes (25); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer (24, 26, 28) overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity (29) between the mouldable polymer (26) and the layer of two dimensional material (23).

說明書

FIG. 1 illustrates a method according to examples of the disclosure. The method may be used to form apparatus 21 comprising one or more electronic components. The electronic components may comprise a two dimensional material such as graphene.

The method comprises, at block 11, forming a layer of two dimensional material 23 on a first release layer 33. The method also comprises, at block 13, forming at least two electrodes 25 and, at block 15, forming a second release layer 37 overlaying at least a portion of the layer of two dimensional material 23. At block 17 the method comprises providing mouldable polymer 27 overlaying the at least two electrodes 25 and the second release layer 37. At block 19 the method comprises removing the first and second release layers 33, 37 to provide a discontinuity 29 between the mouldable polymer 27 and the layer of two dimensional material 23.

It is to be appreciated that the electrodes 25 and the layer of two dimensional material 23 may have any configuration which enables an electronic component to be formed. An example method for forming field effect transistor (FET) devices is illustrated in more detail in FIGS. 3A to 3I. Other methods for forming FETs and other types of devices may be used in other examples of the disclosure.

權(quán)利要求

1
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