Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
摘要
說明書
Further, in “Low Loss 4H—SiC PiN Diode with Local Low Carrier Lifetime Region” (K Nakayama, et al.), in the n?-type drift layer, provision of a low carrier lifetime layer at a position separated from the pn junction surface between the p-type anode layer and the n?-type drift layer, and use of vanadium as an example of an element doped in the low carrier lifetime layer are described. Nonetheless, in “Low Loss 4H—SiC PiN Diode with Local Low Carrier Lifetime Region” (K Nakayama, et al.), no method of managing whether the carrier lifetime of the low carrier lifetime layer is set within an allowable range of the design value is described.
Embodiments of a silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. In the present description and accompanying drawings, layers and regions prefixed with n or p mean that majority carriers are electrons or holes. Additionally, + or ? appended to n or p means that the impurity concentration is higher or lower, respectively, than layers and regions without + or ?. In the description of the embodiments below and the accompanying drawings, main portions that are identical will be given the same reference numerals and will not be repeatedly described.
