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Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

專利號(hào)
US10868122B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
FUJI ELECTRIC CO., LTD.（JP Kawasaki）
發(fā)明人
Takeshi Tawara; Koji Nakayama; Yoshiyuki Yonezawa; Hidekazu Tsuchida; Koichi Murata
IPC分類
H01L29/16; H01L29/868; H01L29/66
技術(shù)領(lǐng)域
layer,type,drift,lifetime,epitaxial,carbide,silicon,vanadium,region,in
地域： Kawasaki

摘要

During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 μm from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.

說(shuō)明書

For example, nitrogen (N) is doped in (added to) the n-type starting substrate 1 and the n-type buffer layer 2 as an n-type impurity (n-type dopant). The n-type buffer layer 2 may be omitted. The first-conductivity-type epitaxial layer 3 in this embodiment is n?-type drift layer 3 and is constituted by first to third n?-type layers 21 to 23 (a first first-conductivity-type epitaxial layer 21; a second first-conductivity-type epitaxial layer 22; and a third first-conductivity-type epitaxial layer 23) that are between the n-type buffer layer 2 and a p-type anode layer 4, and that are stacked sequentially in the order stated from the n-type buffer layer 2 as illustrated in FIG. 1. The n?-type drift layer 3 (the first to the third n?-type layers 21 to 23) is doped with, for example, nitrogen (first element) as an n-type impurity. The p-type anode layer 4 is doped with, for example, aluminum (Al) as a p-type impurity (p-type dopant).

權(quán)利要求

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