白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

專(zhuān)利號(hào)
US10868122B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
FUJI ELECTRIC CO., LTD.（JP Kawasaki）
發(fā)明人
Takeshi Tawara; Koji Nakayama; Yoshiyuki Yonezawa; Hidekazu Tsuchida; Koichi Murata
IPC分類(lèi)
H01L29/16; H01L29/868; H01L29/66
技術(shù)領(lǐng)域
layer,type,drift,lifetime,epitaxial,carbide,silicon,vanadium,region,in
地域： Kawasaki

摘要

During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 μm from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.

說(shuō)明書(shū)

In FIG. 1, the conductivity type of the n-type starting substrate 1 is indicated by “nsub”. Further, doping of nitrogen as a dopant in the n-type starting substrate 1, the n-type buffer layer 2, and the n?-type drift layer 3 is indicated by “N doped”. Doping of vanadium as a dopant in the n?-type drift layer 3 is indicated by “V doped” and doping of aluminum as a dopant in the p-type anode layer 4 is indicated by “Al doped”. Relative lengths of the carrier lifetime of the n?-type drift layer 3 are indicated as “l(fā)ong carrier lifetime” and “short carrier lifetime”, respectively.

In the edge termination region 32, the p-type epitaxial layer 43 is removed spanning the edge termination region 32 entirely, whereby at the front surface 13a of the semiconductor substrate 10, a recess 13 (concave on the cathode side) at which the edge termination region 32 is lower than the active region 31 is formed. In the edge termination region 32, a front surface 13a′ of the semiconductor substrate 10 is newly formed by the recess 13. At the front surface 13a′ of the semiconductor substrate 10 in the edge termination region 32, the third n?-type layer 23 is exposed. The p-type epitaxial layer 43 and the third n?-type layer 23 may be removed to a predetermined depth at the time of formation of the recess 13.

權(quán)利要求

1
微信群二維碼
意見(jiàn)反饋