Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
摘要
說明書
In particular, the JTE structure has a structure in which the plural p-type regions of differing impurity concentrations are disposed adjacent to each other in concentric circles surrounding a periphery of the active region 31, so that the p-type regions are disposed in descending order of impurity concentration from nearest the active region 31 outward toward the chip edge. The FLR has structure in which the plural p-type regions are disposed separated from each other in concentric circles surrounding a periphery of the active region 31. In both the JTE structure and the FLR, an innermost p-type region constituting the edge termination structure 5 extends toward the active region 31, along the step 13b of the recess 13 and is in contact with the p-type anode layer 4 at the pn junction surface 12 between the p-type anode layer 4 and the n?-type drift layer 3.
