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Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

專利號(hào)
US10868122B2
公開日期
2020-12-15
申請人
FUJI ELECTRIC CO., LTD.（JP Kawasaki）
發(fā)明人
Takeshi Tawara; Koji Nakayama; Yoshiyuki Yonezawa; Hidekazu Tsuchida; Koichi Murata
IPC分類
H01L29/16; H01L29/868; H01L29/66
技術(shù)領(lǐng)域
layer,type,drift,lifetime,epitaxial,carbide,silicon,vanadium,region,in
地域： Kawasaki

摘要

During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 μm from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.

說明書

In particular, by obtaining a depth distribution of the n-type doping concentration of the n?-type drift layer 3, in the n?-type drift layer 3, the n-type doping concentration difference of the n?-type lifetime reduced layer 22 in which vanadium is doped and the first and the third n?-type layers 21, 23 in which vanadium is not doped may be obtained. Therefore, a value obtained by dividing the n-type doping concentration difference of the first and the third n?-type layers 21, 23 and the n?-type lifetime reduced layer 22 by four is substantially the vanadium concentration (≈[the n-type doping concentration difference of the first and the third n?-type layers 21, 23 and the n?-type lifetime reduced layer 22]/4) of the n?-type lifetime reduced layer 22.

權(quán)利要求

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