Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
地域：
Kawasaki
摘要
During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 μm from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.
說明書
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Between the n?-type lifetime reduced layer 22 and the pn junction surface 12 between the p-type anode layer 4 and the n?-type drift layer 3, the third n?-type layer 23 in which only nitrogen is doped and no vanadium is doped, is disposed in contact with the p-type anode layer 4 and the n?-type lifetime reduced layer 22. Therefore, for example, in the edge termination region 32, even when the edge termination structure 5 is disposed so as to be in contact with the pn junction surface 12 between the p-type anode layer 4 and the n?-type drift layer 3, variation of the activation rate of the p-type regions constituting the edge termination structure 5 may be avoided, enhancing device performance.
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