The n-type drift layer 103 has a nitrogen concentration that is uniform from an interface 111 between the n-type buffer layer 102 and the n-type drift layer 103 to the pn junction surface 112 between the p-type anode layer 104 and the n-type drift layer 103. An anode electrode (not depicted) is in contact with the p-type anode layer 104. A cathode electrode (not depicted) is in contact with a rear surface of the n-type starting substrate 101 that constitutes an n+-type cathode layer. In FIG. 14, an edge termination structure 105 such as a junction termination extension (JTE) structure, a field limiting ring (FLR), etc. is depicted in a simplified manner.
Further, in FIG. 14, a conductivity type of the n-type starting substrate 101 is indicated by “nsub”. Further, doping of the n-type starting substrate 101, the n-type buffer layer 102, and the n-type drift layer 103 with nitrogen as a dopant is indicated by “N doped”. Doping of the n-type drift layer 103 with vanadium as a dopant is indicated by “V doped”. Doping of the p-type anode layer 104 with aluminum as a dopant is indicated by “Al doped”. Relative lengths of the carrier lifetime of the n-type drift layer 103 are indicated by “l(fā)ong carrier lifetime” and “short carrier lifetime”.
