A structure of an IGBT to which the silicon carbide semiconductor device according to the first embodiment is applied will be described as the silicon carbide semiconductor device according to a second embodiment. FIG. 6 is a cross-sectional view of a structure of the silicon carbide semiconductor device according to the second embodiment. The silicon carbide semiconductor device according to the second embodiment and depicted in FIG. 6 is an IGBT to which the silicon carbide semiconductor device according to the first embodiment is applied and, for example, is fabricated (manufactured) using a semiconductor substrate 240 in which silicon carbide layers 241 to 244 respectively constituting a p-type collector layer 202, an n-type filed stop (FS) layer 203, an n?-type drift layer 204, and a p-type channel region 206 are sequentially formed by epitaxial growth.
In FIG. 6, doping of nitrogen as a dopant in the n-type field stop layer 203 and the n?-type drift layer 204 is indicated by “N doped”. Doping of vanadium as a dopant in the n?-type drift layer 204 is indicated by “V doped”. Doping of aluminum as a dopant in the p-type collector layer 202 and the p-type channel region 206 is indicated by “Al doped”. Relative lengths of the carrier lifetime of the n?-type drift layer 204 are respectively indicated by “l(fā)ong carrier lifetime” and “short carrier lifetime”.
