Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
摘要
說(shuō)明書
In the n?-type drift layer 304, similarly to the first embodiment, a second n?-type layer (n?-type lifetime reduced layer) 311 is provided. Conditions of the carrier lifetime of the first to the third n?-type layers 310 to 312 of the n?-type drift layer 304 are similar to those of the first to the third n?-type layers 21 to 23 in the first embodiment. In the third embodiment, an n?-type lifetime reduced layer 311 suffices to be provided at a position that in a direction toward the p-type starting substrate 301, is a certain distance (depth) d311 from a pn junction surface (interface) 331 in an npnp diode that constitutes the GTO thyristor. As a result, similarly to the first embodiment, a edge termination structure 309 may be prevented from being adversely affected.
