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Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

專利號
US10868122B2
公開日期
2020-12-15
申請人
FUJI ELECTRIC CO., LTD.（JP Kawasaki）
發(fā)明人
Takeshi Tawara; Koji Nakayama; Yoshiyuki Yonezawa; Hidekazu Tsuchida; Koichi Murata
IPC分類
H01L29/16; H01L29/868; H01L29/66
技術領域
layer,type,drift,lifetime,epitaxial,carbide,silicon,vanadium,region,in
地域： Kawasaki

摘要

During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n?-type lifetime reduced layer is selectively formed in the n?-type drift layer. The n?-type lifetime reduced layer is disposed at a depth that is more than 5 μm from a pn junction surface between a p-type anode layer and the n?-type drift layer in a direction toward a cathode side, and the n?-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n?-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is ? times a thickness of the n?-type drift layer. A vanadium concentration of the n?-type lifetime reduced layer is 1/100 to ? of a nitrogen concentration of the n?-type lifetime reduced layer.

說明書

For example, a surface of the second p-type layer 305 may be exposed at the front surface of the semiconductor substrate 320 by a recess 13′ (concave on the p-type starting substrate 301 side) at which an edge termination region 32 side of the active region 31 is lower than a center portion side of the active region 31. The p+-type gate contact region 307 may be selectively provided in a surface layer of the second p-type layer 305, the surface layer having the exposed surface in the active region 31. An n+-type cathode contact region 308 is selectively formed in the second n-type layer 306. The second n-type layer 306 is in contact with a cathode electrode 314 via the n+-type cathode contact region 308 and is at an electric potential K of the cathode electrode 314. The p-type starting substrate 301 is in contact with an anode electrode 315 and is at an electric potential A of the anode electrode 315.

權利要求

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