Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
摘要
說(shuō)明書(shū)
Next, after the semiconductor substrate for which the CV measurement has be performed is cleaned, the silicon carbide layers 324, 325 constituting the second p-type layer 305 and the second n-type layer 306 are sequentially formed on the pn junction surface 331 of the third n?-type layer 312, by epitaxial growth. Next, by a photolithography process and etching, a portion of the silicon carbide layers 324, 325 (i.e., the second p-type layer 305 and the second n-type layer 306) is removed, exposing the pn junction surface 331 of the third n?-type layer 312 in the edge termination region 32. As a result, the semiconductor substrate 320 is fabricated in which the silicon carbide layers 321 to 325 are sequentially formed on the p-type starting substrate 301 by epitaxial growth and the recess 13 at which the edge termination region 32 is lower than the active region 31 is present on the front surface.
