In the embodiment, the silicon carbide semiconductor device has the pn junction surface between the second-conductivity-type epitaxial layer and the first first-conductivity-type epitaxial layer.

In the embodiment, the silicon carbide semiconductor device further includes a second first-conductivity-type epitaxial layer between the pn junction surface and the first first-conductivity-type epitaxial layer, the second first-conductivity-type epitaxial layer containing more of the first element than does the first first-conductivity-type epitaxial layer. The silicon carbide semiconductor device has the pn junction surface between the second-conductivity-type epitaxial layer and the second first-conductivity-type epitaxial layer.

In the embodiment, the first first-conductivity-type epitaxial layer has a region that does not contain the second element and the region has a carrier lifetime that is at least 10 μs.

In the embodiment, a method of manufacturing the silicon carbide semiconductor device, includes applying a predetermined voltage between both surfaces of the first first-conductivity-type epitaxial layer, causing a depletion layer in the first first-conductivity-type epitaxial layer to spread; and obtaining a depth distribution of a first-conductivity-type doping concentration of the first first-conductivity-type epitaxial layer, based on an amount of change in capacitance of the depletion layer.

In the embodiment, the silicon carbide semiconductor device is any one of a PiN diode, a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), and a gate turn-off (GTO) thyristor.