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Semiconductor devices including field effect transistors and methods of forming the same

專利號(hào)
US10868125B2
公開日期
2020-12-15
申請(qǐng)人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域： Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說明書

FIGS. 10A to 13A are plan views illustrating a method of forming a semiconductor device according to a second embodiment of the inventive concepts;

FIGS. 10B to 13B are cross-sectional views taken along lines I-I′, II-II′, and III-III′ of FIGS. 10A to 13A, respectively;

FIG. 14 is a cross-sectional view corresponding to the line III-III′ of FIG. 13A to illustrate a method of forming a semiconductor device according to a modified embodiment of a second embodiment of the inventive concepts;

FIG. 15A is a plan view illustrating a semiconductor device according to a third embodiment of the inventive concepts;

FIGS. 15B, 15C, 15D, and 15E are cross-sectional views taken along lines I-I′, II-II′, III-III′, and IV-IV′ of FIG. 15A, respectively;

FIG. 15F is a cross-sectional view corresponding to the line IV-IV′ of FIG. 15A to illustrate a semiconductor device according to a modified embodiment of a third embodiment of the inventive concepts;

FIGS. 16A to 20A are plan views illustrating a method of forming a semiconductor device according to a third embodiment of the inventive concepts;

FIGS. 16B to 20B are cross-sectional views taken along lines I-I′ and II-II′ of FIGS. 16A to 20A, respectively;

權(quán)利要求

1
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