Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
The channel pattern 108 may include a material of which an energy band gap is smaller than that of the second buffer pattern 106. In exemplary embodiments, the channel pattern 108 may include a material of which an energy band gap is smaller than those of the first and second buffer patterns 102 and 106. For example, the channel pattern 108 may include silicon (Si), germanium (Ge), silicon-germanium (SiGe), or a III-V group compound (e.g., aluminum phosphide (AlP), gallium phosphide (GaP), indium phosphide (InP), aluminum arsenide (AlAs), gallium arsenide (GaAs), indium arsenide (InAs), aluminum antimonide (AlSb), gallium antimonide (GaSb), or indium antimonide (InSb)). In exemplary embodiments, the first buffer pattern 102, the second buffer pattern 106, and the channel pattern 108 may be formed of the III-V group compounds. In such embodiments, the channel pattern 108 may be formed of the III-V group compound of which an energy band gap is smaller than those of the III-V group compounds of the first and second buffer patterns 102 and 106.
The barrier pattern 112 may include a material of which an energy band gap is greater than that of the channel pattern 108. That is, in such embodiments the channel pattern 108 may include the material of which the energy band gap is smaller than those of the barrier pattern 112 and the second buffer pattern 106, so the channel pattern 108 may have a quantum well structure. The barrier pattern 112 may include silicon (Si), germanium (Ge), silicon-germanium (SiGe), or a III-V group compound. In other exemplary embodiments, the barrier pattern 112 may be omitted.
