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Semiconductor devices including field effect transistors and methods of forming the same

專利號
US10868125B2
公開日期
2020-12-15
申請人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域： Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說明書

The second buffer layer 126 formed on the second support substrate 300 may be provided on the doped graphene layer 125. The second buffer layer 126 may have a first surface being in contact with the second support substrate 300 and a second surface opposite to the first surface. The second surface of the second buffer layer 126 may face a top surface of the doped graphene layer 125.

Referring to FIG. 8B, the second buffer layer 126 and the second support substrate 300 may be provided on the doped graphene layer 125 such that the second surface of the second buffer layer 126 may be in contact with the top surface of the doped graphene layer 125. In exemplary embodiments, the second buffer layer 126 may be adhered to the doped graphene layer 125 by pressure or heat. Hereinafter, a method of removing the second support substrate 300 from the second buffer layer 126 will be described.

An ion implantation process may be performed on the substrate 100 to implant hydrogen ions H+ into the second buffer layer 126. In this manner, in accordance with principles of inventive concepts a bubble layer may be formed in the second buffer layer 126 to define an interface L at which the second buffer layer 126 can be physically divided. Second buffer layer 126 may be divided into an upper portion UP adjacent to the second support substrate 300 and a lower portion LP adjacent to the doped graphene layer 125 by interface L.

權(quán)利要求

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