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Semiconductor devices including field effect transistors and methods of forming the same

專(zhuān)利號(hào)
US10868125B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類(lèi)
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域： Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說(shuō)明書(shū)

The barrier layer 132 may include a material of which an energy band gap is greater than that of the channel layer 128. That is, in exemplary embodiments in accordance with principles of inventive concepts, the channel layer 128 may include the material of which the energy band gap is smaller than those of the barrier layer 132 and the second buffer layer 126. As a result, in accordance with principles of inventive concepts, the channel layer 128 may have a quantum well structure. The barrier layer 132 may include silicon (Si), germanium (Ge), silicon-germanium (SiGe), or a III-V group compound. In other exemplary embodiments, the barrier layer 132 may be omitted.

Referring to FIG. 5, the barrier layer 132, the channel layer 128, the second buffer layer 126, the doped graphene layer 125, and the first buffer layer 122 may be sequentially patterned to form an active pattern AP on the substrate 100. An upper portion of the substrate 100 may be recessed during the patterning process. In exemplary embodiments on accordance with principles of inventive concepts, active pattern AP may include a first buffer pattern 102, a doped pattern 104, a second buffer pattern 106, a channel pattern 108, and a barrier pattern 112 which are sequentially stacked on the substrate 100.

權(quán)利要求

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