Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
In exemplary embodiments in accordance with principles of inventive concepts, the active pattern may include a plurality of active patterns. The gate electrode may intersect the plurality of active patterns, and the doped patterns of the plurality of the active patterns may have the same conductivity type.
In exemplary embodiments in accordance with principles of inventive concepts, a semiconductor device may include: a first active pattern and a second active pattern spaced apart from each other on a substrate; and a first transistor and a second transistor comprising the first active pattern and the second active pattern, respectively. Each of the first and second active patterns may include: a first buffer pattern on the substrate; a channel pattern on the first buffer pattern; a doped pattern between the first buffer pattern and the channel pattern; and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern may include graphene injected with an impurity.
In exemplary embodiments in accordance with principles of inventive concepts, a conductivity type of the doped pattern of the first active pattern may be different from that of the doped pattern of the second active pattern.
In exemplary embodiments in accordance with principles of inventive concepts, the channel pattern of the first active pattern may include the same material as the channel pattern of the second active pattern.
In exemplary embodiments in accordance with principles of inventive concepts, the channel patterns of the first and second active patterns may include a III-V group compound.
