Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
In a cross-sectional view, the first doped pattern 104a may be more adjacent, or closer, to the channel pattern 108 of the first active pattern AP1 than to the substrate 100. The first doped pattern 104a may provide extra carriers to the channel pattern 108 of the first active pattern AP1. If the first doped pattern 104a has the P-type, the first doped pattern 104a may provide extra holes to the channel pattern 108 of the first active pattern AP1, for example. Similarly, the second doped pattern 104b may be more adjacent, or closer, to the channel pattern 108 of the second active pattern AP2 than to the substrate 100. The second doped pattern 104b may provide extra carriers to the channel pattern 108 of the second active pattern AP2. If the second doped pattern 104b has the N-type, the second doped pattern 104b may provide extra electrons to the channel pattern 108 of the second active pattern AP2, for example.
According to the present exemplary embodiment, the channel pattern 108 of the first active pattern AP1 may be formed of the same material as the channel pattern 108 of the second active pattern AP2. In some exemplary embodiments, the channel patterns 108 of the first and second active patterns AP1 and AP2 may include a III-group antimonide (Sb) compound. The III-group antimonide may include indium-gallium antimonide (InGaSb) or indium antimonide (InSb), for example.
