Semiconductor devices including field effect transistors and methods of forming the same
摘要
說(shuō)明書(shū)
The first buffer pattern 102 of the first active pattern AP1 may be formed of the same material as the first buffer pattern 102 of the second active pattern AP2. The second buffer pattern 106 of the first active pattern AP1 may be formed of the same material as the second buffer pattern 106 of the second active pattern AP2. The barrier pattern 112 of the first active pattern AP1 may be formed of the same material as the barrier pattern 112 of the second active pattern AP2.
In each of the active patterns AP1 and AP2, the channel pattern 108 may include a material of which an energy band gap is smaller than those of the second buffer pattern 106 and the barrier pattern 112. As a result, in accordance with principles of inventive concepts, the channel pattern 108 may have a quantum well structure. In other exemplary embodiments, the barrier pattern 112 may be omitted in each of the active patterns AP1 and AP2.
