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Semiconductor devices including field effect transistors and methods of forming the same

專利號(hào)
US10868125B2
公開日期
2020-12-15
申請(qǐng)人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域： Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說明書

According to an exemplary embodiment, both sidewalls of each of the active patterns AP1 and AP2 may not be exposed by the device isolation layer ST, as illustrated in FIG. 9D. Alternatively, each of the active patterns AP1 and AP2 may have an upper portion (e.g., an active fin AF) exposed by the device isolation layer ST, as illustrated in FIG. 9E. That is, in accordance with principles of inventive concepts, upper portions of the both sidewalls of each of the active patterns AP1 and AP2 may be exposed by the device isolation layer ST. In such embodiments, a height of a top surface STu of the device isolation layer ST may be lower than a height of a bottom surface 104L of each of the first and second doped patterns 104a and 104b.

A gate electrode GE may be provided to intersect the active patterns AP1 and AP2. According to an exemplary embodiment, one gate electrode GE may intersect the plurality of active patterns AP1 and AP2, as illustrated in FIG. 9A. Alternatively, unlike FIG. 9A, a plurality of gate electrodes GE may be provided to intersect the plurality of active patterns AP1 and AP2, respectively.

權(quán)利要求

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