FIGS. 10A to 13A are plan views illustrating an exemplary method of forming a semiconductor device according to a second embodiment of the inventive concepts in accordance with principles of inventive concepts. FIGS. 10B to 13B are cross-sectional views taken along lines I-I′, II-II′, and III-III′ of FIGS. 10A to 13A, respectively. FIG. 14 is a cross-sectional view corresponding to the line III-III′ of FIG. 13A to illustrate a method of forming a semiconductor device according to a modified embodiment of a second exemplary embodiment in accordance with principles of inventive concepts. In the present exemplary embodiment, the same elements as described in the formation method according to the first embodiment of FIGS. 2 to 5 will be indicated by the same reference numerals or the same reference designators. For the purpose of ease and convenience in explanation, the descriptions to the same elements as in the formation method of the first embodiment will be omitted or only briefly described.
A first buffer layer 122 may be first formed on a substrate 100, as described with reference to FIG. 2. The first buffer layer 122 may include silicon (Si), germanium (Ge), silicon-germanium (SiGe), or a III-V group compound. A graphene layer 124 may be provided on the first buffer layer 122. As described with reference to FIGS. 7A, 7B, and 7C, the graphene layer 124 may be formed on the first support substrate 200 and may be then provided onto, or formed on, the first buffer layer 122 by means of a transfer process.
