Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
Each of the first to third doped patterns 104a, 104b, and 104c may include graphene that is injected or doped with an impurity and may have a crystal structure formed by substituting the impurity for one or some of carbon atoms of the graphene. Each of the first to third doped patterns 104a, 104b, and 104c may have a thickness t of one atomic layer employing a two-dimensional crystal structure of the graphene. The thicknesses t of the first, second, and third doped patterns 104a, 104b, and 104c may be substantially equal to each other.
According to the present exemplary embodiment, the first to third doped patterns 104a, 104b, and 104c may have the same conductivity type, but impurity concentrations of the first to third doped patterns 104a, 104b, and 104c may be different from each other. In some embodiments, the first to third doped patterns 104a, 104b, and 104c may have a P-type, and the impurity concentrations of the first to third doped patterns 104a, 104b, and 104c may be different from each other. In such exemplary embodiments, the impurity may include, for example, boron. In other exemplary embodiments, the first to third doped patterns 104a, 104b, and 104c may have an N-type, and the impurity concentrations of the first to third doped patterns 104a, 104b, and 104c may be different from each other. In such exemplary embodiments, the impurity may include, for example, halogen atoms such as nitrogen or fluorine.
