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Semiconductor devices including field effect transistors and methods of forming the same

專利號(hào)
US10868125B2
公開日期
2020-12-15
申請(qǐng)人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域： Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說明書

The first buffer patterns 102 of the first to third active patterns AP1, AP2, and AP3 may be formed of the same material, and the second buffer patterns 106 of the first to third active patterns AP1, AP2, and AP3 may be formed of the same material. In addition, the barrier patterns 112 of the first to third active patterns AP1, AP2, and AP3 may be formed of the same material.

In exemplary embodiments in accordance with principles of inventive concepts, each of the first to third active patterns AP1, AP2, and AP3, the channel pattern 108 may include a material of which an energy band gap is smaller than those of the second buffer pattern 106 and the barrier pattern 112. As a result, the channel pattern 108 may have a quantum well structure. In other exemplary embodiments, the barrier pattern 112 may be omitted in each of the active patterns AP1, AP2, and AP3.

權(quán)利要求

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