Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
According to exemplary embodiments of inventive concepts, extra carriers may be provided to the channel pattern using the doped pattern that is formed of the graphene doped with the impurity, and, in accordance with principles of inventive concepts, the electrical conductivity of the channel pattern may be increased to improve the operating characteristic of the transistor. In addition, the doped pattern may have the thickness of one atomic layer by the two-dimensional crystal structure of the graphene, so the characteristic dispersion of the transistor may be improved. Furthermore, heat generated from the transistor including the doped pattern may be easily dissipated by the high thermal conductivity of the graphene.
In addition, the graphene layer may be formed to include doped regions that are injected with impurities having different conductivity types from each other, or which are injected with the impurities having the same conductivity type but different impurity concentrations from each other. Thereafter, the graphene layer may be patterned to form the doped patterns which have different conductivity types from each other, or which have the same conductivity type and different impurity concentrations from each other. As a result, the semiconductor components (e.g., the field effect transistors) including the same channel material and having the different conductivity types from each other may be easily realized using the doped patterns, or the semiconductor components including the same channel material and having the different threshold voltages from each other may be easily realized using the doped patterns.
