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Semiconductor devices including field effect transistors and methods of forming the same

專利號
US10868125B2
公開日期
2020-12-15
申請人
Samsung Electronics Co., Ltd.
發(fā)明人
Mirco Cantoro; Zhenhua Wu; Krishna Bhuwalka; Sangsu Kim; Shigenobu Maeda
IPC分類
H01L29/267; H01L27/092; H01L27/088; H01L21/8234; H01L21/8238; H01L29/10; H01L29/16; H01L29/165; H01L21/02; H01L29/06
技術(shù)領(lǐng)域
doped,pattern,layer,graphene,may,buffer,ap2,ap1,patterns,active
地域: Suwon-si

摘要

A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.

說明書

The electronic system 1100 may be applied to a personal digital assistant (PDA), a portable computer, a web tablet, a wireless phone, a mobile phone, a digital music player, a memory card, or other electronic products receiving and/or transmitting information data by wireless.

According to exemplary embodiments in accordance with principles of inventive concepts, extra carriers may be provided to a channel pattern using a doped pattern formed of graphene injected or implanted with an impurity. In this manner, in accordance with principles of inventive concepts, the electrical conductivity of the channel pattern may be increased to improve the operating characteristic of a field effect transistor. In addition, the doped pattern may have the thickness of one atomic layer by the two-dimensional crystal structure of the graphene, so the characteristic dispersion of the field effect transistor may be improved. Furthermore, heat generated from the transistor including the doped pattern may be easily dissipated by the high thermal conductivity property of the graphene.

權(quán)利要求

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