Semiconductor devices including field effect transistors and methods of forming the same
摘要
說明書
In addition, in accordance with principles of inventive concepts, the graphene layer may be formed to include doped regions that are injected with impurities having different conductivity types from each other, or which are injected with impurities having the same conductivity type but different impurity concentrations from each other. Thereafter, the graphene layer may be patterned to form the doped patterns which have different conductivity types from each other, or which have the same conductivity type and different impurity concentrations from each other. As a result, the semiconductor components (e.g., the field effect transistors) including the same channel material and having the different conductivity types from each other may be easily realized using the doped patterns, or the semiconductor components including the same channel material and having different threshold voltages from each other may be easily realized using the doped patterns.
While inventive concepts have been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of inventive concepts. Therefore, it should be understood that the above embodiments are not limiting, but illustrative and the scope of inventive concepts are to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing description.
