Semiconductor device including standard cells with header/footer switch including negative capacitance
地域：
Hsinchu
摘要
A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
說(shuō)明書(shū)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
The disclosure relates to semiconductor integrated circuits, and more particularly to semiconductor devices including negative capacitance field effect transistors (NC FETs).
The subthreshold swing is a feature of a transistor's current-voltage characteristic. In the subthreshold region the drain current behavior is similar to the exponentially increasing current of a forward biased diode. A plot of logarithmic drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately logarithmic linear behavior in this metal-oxide-semiconductor (MOS) FET operating region. To improve the subthreshold properties, a negative capacitance field effect transistor (NC FET) using a ferroelectric material has been proposed.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
權(quán)利要求
What is claimed is:1. A semiconductor device, comprising:a first potential supply line for supplying a first potential; a second potential supply line for supplying a second potential lower than the first potential; a functional circuit including a PMOS transistor and a NMOS transistor; and a switch disposed between the first potential supply line and one of the PMOS transistor and the NMOS transistor of the functional circuit, wherein: a voltage potential of the first potential supply line is supplied to the functional circuit via the switch, and the switch includes a negative capacitance (NC) MOS FET showing a negative capacitance, and the NMOS and PMOS transistors are normal MOS FETs, and in an NC MOS FET, a gate voltage is applied to a gate dielectric layer through a negative capacitor, the negative capacitor being directly connected to a gate electrode of the NC MOS FET, and in a normal MOS FET, a gate voltage is applied to a gate dielectric layer without a negative capacitor. 2. The semiconductor device of claim 1 , wherein the NC MOS FET includes a gate dielectric layer, a first gate electrode disposed over the gate dielectric layer, a ferroelectric layer disposed over the first gate electrode and a second gate electrode disposed over the ferroelectric layer, the first gate electrode, the ferroelectric layer and the second gate electrode constituting the negative capacitor. 3. The semiconductor device of claim 2 , wherein the ferroelectric layer includes one or more selected from the group consisting of ZrO2, ZrAlSiO, HfO2, ZrO2 doped with Si, and ZrO2 doped with Al. 4. The semiconductor device of claim 3 , wherein a thickness of the ferroelectric layer is in a range from 1.0 nm to 10 nm. 5. The semiconductor device of claim 1 , wherein the functional circuit includes a static random access memory. 6. The semiconductor device of claim 1 , wherein the switch is disposed between the first potential supply line and the PMOS transistor. 7. The semiconductor device of claim 6 , wherein:the functional circuit includes an internal potential supply line to which a source of the PMOS transistor is coupled, and a drain of the NC MOS FET of the switch is coupled to the internal potential supply line and a source of the NC MOS FET of the switch is coupled to the first potential supply line. 8. The semiconductor device of claim 1 , wherein the switch is disposed between the first potential supply line and the NMOS transistor. 9. The semiconductor device of claim 8 , wherein:the functional circuit includes an internal potential supply line to which a drain of the NMOS transistor is coupled, and a source of the NC MOS FET of the switch is coupled to the internal potential supply line and a drain of the NC MOS FET of the switch is coupled to the first potential supply line. 10. A semiconductor device, comprising:a first potential supply line for supplying a first potential; a second potential supply line for supplying a second potential lower than the first potential; a functional circuit including a CMOS circuit constituted by normal MOS FETs; and a switch disposed between the first potential supply line and the CMOS circuit of the functional circuit, wherein: a voltage potential of the first potential supply line is supplied to the CMOS circuit via the switch, the switch includes a negative capacitance (NC) MOS FET, in the NC MOS FET, a gate voltage is applied to a gate dielectric layer through a negative capacitor, the negative capacitor being directly connected to a gate electrode of the NC MOS FET, and in a normal MOS FET, a gate voltage is applied to a gate dielectric layer without a negative capacitor, and the NC MOS FET comprises a gate dielectric layer, a first gate electrode disposed over the gate dielectric layer, a ferroelectric layer disposed over the first gate electrode and a second gate electrode disposed over the ferroelectric layer, the first gate electrode, the ferroelectric layer and the second gate electrode constituting the negative capacitor. 11. The semiconductor device of claim 10 , wherein the CMOS circuit is an inverter. 12. The semiconductor device of claim 10 , wherein the ferroelectric layer includes one or more selected from the group consisting of ZrO2, ZrAlSiO, ZrO2 doped with Si, and ZrO2 doped with Al. 13. The semiconductor device of claim 12 , wherein a thickness of the ferroelectric layer is in a range from 1.0 nm to 10 nm. 14. The semiconductor device of claim 10 , wherein:the functional circuit includes a first internal potential supply line and a second internal potential supply line, and the CMOS circuit is disposed between and coupled to the first and second potential supply lines. 15. A semiconductor device, comprising:a first potential supply line for supplying a first potential; a first internal potential supply line and a second internal potential supply line separated from the first internal potential supply line, both for supplying the first potential; a second potential supply line for supplying a second potential lower than the first potential; a first functional circuit including a PMOS transistor and a NMOS transistor; a second functional circuit including a PMOS transistor and a NMOS transistor; a first negative capacitance (NC) FET disposed between the first potential supply line and the first internal potential supply line; and a second NC FET disposed between the first potential supply line and the second internal potential supply line, wherein: the NMOS and PMOS transistors are normal MOS FETs, and each of the first and second NC FETs comprises a gate dielectric layer, a first gate electrode disposed over the gate dielectric layer, a ferroelectric layer disposed over the first gate electrode and a second gate electrode disposed over the ferroelectric layer, in an NC FET, a gate voltage is applied to a gate dielectric layer through a negative capacitor, and in a normal FET, a gate voltage is applied to a gate dielectric layer without a negative capacitor. 16. The semiconductor device of claim 15 , wherein the first functional circuit includes a CMOS inverter constituted by normal MOS FETs. 17. The semiconductor device of claim 15 , wherein the ferroelectric layer includes one or more selected from the group consisting of ZrO2, ZrAlSiO, HfO2, HfZrO2, HfO2 doped with Zr (HfZrOx), HfO2 doped with Al (HfAlOx), and HfO2 doped with Si (HfSiOx). 18. The semiconductor device of claim 15 , wherein a thickness of the ferroelectric layer is in a range from 1.0 nm to 10 nm. 19. The semiconductor device of claim 15 , wherein the first functional circuit includes a static random access memory. 20. The semiconductor device of claim 15 , further comprising:a third internal potential supply line and a fourth internal potential supply line separated from the third internal potential supply line, both for supplying the second potential; a third NC FET disposed between the second potential supply line and the third internal potential supply line; and a fourth NC FET disposed between the second potential supply line and the fourth internal potential supply line.
意見(jiàn)反饋
使用該功能遇到問(wèn)題
該功能需要專(zhuān)業(yè)版企業(yè)版VIP權(quán)限，您可以：
您也可以聯(lián)系官方QQ: 2157717237 電話: 13264338900
PatentHub聯(lián)系方式
掃描加專(zhuān)利匯官方微信交流群
