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Semiconductor device including standard cells with header/footer switch including negative capacitance

專利號
US10868132B2
公開日期
2020-12-15
申請人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.(TW Hsinchu)
發(fā)明人
Chien-Hsing Lee; Chih-Sheng Chang; Wilman Tsai; Chia-Wen Chang; Ling-Yen Yeh; Carlos H. Diaz
IPC分類
H01L29/51; H01L29/66; H01L27/11; H01L27/092; H01L29/16; H01L29/40; H01L29/78
技術領域
fet,mos,nc,gate,dielectric,layer,fets,potential,switch,in
地域: Hsinchu

摘要

A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

說明書

s ? ( log 10 ? ? I ) ? ( 1 + C s C ins ) ? ( kT q ? ln ? ? 10 ) ( 3 )

權利要求

1
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