FIG. 3A shows a cross sectional view of a metal-insulator-metal-insulator-semiconductor (MIMIS) FET-type NC FET and FIGS. 3B and 3C show cross sectional views of metal-insulator-semiconductor (MIS) FET-type NC FETs.
FIGS. 4A, 4B, 4C and 4D show manufacturing operations for an NC FET in accordance with an embodiment of the present disclosure.
FIGS. 5A, 5B and 5C show various views of an NC FET in accordance with an embodiment of the present disclosure.
FIGS. 6A, 6B, 6C and 6D show manufacturing operations for an NC FET in accordance with an embodiment of the present disclosure.
FIGS. 7A, 7B, 7C and 7D show manufacturing operations for an NC FET in accordance with an embodiment of the present disclosure.
FIGS. 8A, 8B, 8C and 8D show manufacturing operations for an NC FET in accordance with an embodiment of the present disclosure.
FIGS. 9A, 9B, 9C, 9D, 9E and 9F show circuit diagrams according to embodiments of the present disclosure.
FIGS. 10A and 10B show circuit diagrams according to embodiments of the present disclosure.
FIGS. 11A and 11B show circuit diagrams according to embodiments of the present disclosure.
DETAILED DESCRIPTION
