Semiconductor device including standard cells with header/footer switch including negative capacitance
地域：
Hsinchu
摘要
A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
說(shuō)明書(shū)
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For the MOS FET portion, the sub-threshold swing is expressed by equation (3), where VG is the applied gate bias, Ψs is the surface potential, Cs is the semiconductor capacitance, and Cins is equal to the gate insulator capacitance Cox. The “1+Cs/Cins” is larger than 1, and therefore the limit Swing dictated by Boltzmann distribution is about 60 mV/dec at room temperature.
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