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Rinse process after forming fin-shaped structure

專利號
US10868148B2
公開日期
2020-12-15
申請人
UNITED MICROELECTRONICS CORP.(TW Hsin-Chu)
發(fā)明人
Po-Chang Lin; Bo-Han Huang; Chih-Chung Chen; Chun-Hsien Lin; Shih-Hung Tsai; Po-Kuang Hsieh
IPC分類
H01L21/02; H01L29/78; H01L29/66; H01L29/51
技術領域
fin,shaped,structures,process,cleaning,substrate,conducted,angles,in,oxide
地域: Hsin-Chu

摘要

A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

說明書

1 2 3 4 5 6 7 8 9 10

First, the present invention uses CF4 to remove polymers on the surface of the fin-shaped structures and then conducts an O2 plasma process to form an oxide layer on the bottom of the fin-shaped structures as well as the corners included by the fin-shaped structures 14 and the substrate 12. By doing so the first cleaning process conducted thereafter would be able to remove the oxide layer and alter the angles included by the fin-shaped structure 14 and the substrate 12 from angles made by planar surfaces to angles having curved surfaces. Moreover the present invention uses isopropyl alcohol (IPA) to rinse the fin-shaped structures after the aforementioned first cleaning process, second cleaning process, and third cleaning process were completed, conducts a baking process to dry the fin-shaped structures, and then conducts a fin cut process to separate the ring-shaped fin-shaped structure into a plurality of rectangular fin-shaped structures. By inserting the above two approaches into a series of cleaning processes conducted in current fin-shaped structure fabrication process, the present invention is able to prevent fin-shaped structure from falling down as pitch reduces.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

權利要求

What is claimed is:1. A method for fabricating semiconductor device, comprising:forming fin-shaped structures on a substrate, wherein the fin-shaped structures comprise a ring-shaped fin-shaped structure;using isopropyl alcohol (IPA) to perform a rinse process;performing a baking process;forming a gate oxide layer on the fin-shaped structures; andperforming a fin cut process to cut the ring-shaped fin-shaped structure after forming the gate oxide layer.
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