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Rinse process after forming fin-shaped structure

專利號(hào)
US10868148B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
UNITED MICROELECTRONICS CORP.(TW Hsin-Chu)
發(fā)明人
Po-Chang Lin; Bo-Han Huang; Chih-Chung Chen; Chun-Hsien Lin; Shih-Hung Tsai; Po-Kuang Hsieh
IPC分類
H01L21/02; H01L29/78; H01L29/66; H01L29/51
技術(shù)領(lǐng)域
fin,shaped,structures,process,cleaning,substrate,conducted,angles,in,oxide
地域: Hsin-Chu

摘要

A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

說(shuō)明書(shū)

1 2 3 4 5 6 7 8 9 10

Next, a first cleaning process is conducted to remove the oxide layer remained on the surface of the fin-shaped structures 14 according to step 104. Specifically, as shown in FIG. 4, the first cleaning process conducted at this stage preferably removes the oxide layer formed during the step 103, transforms the angles included between sidewalls of the fin-shaped structures 14 and the top surface of the substrate 12 from angles made of planar surfaces to angles made of curved surfaces, and at the same time removes majority of impurities remained on the surface of the substrate 12 and/or fin-shaped structures 14. In this embodiment, the cleaning agent used in the first cleaning process preferably includes but not limited to for example diluted hydrofluoric acid (dHF).

Next, a second cleaning process is conducted according to step 105 to remove polymers remained on surface of the fin-shaped structures. In this embodiment, the cleaning agent used in the second cleaning process preferably includes but not limited to for example ozone (O3).

Next, a third cleaning process is conducted according to step 106 to remove particles remained on the surface of the fin-shaped structures. In this embodiment, the cleaning agent used in the third cleaning process preferably includes but not limited to for example Standard Clean 1 (SC1).

權(quán)利要求

What is claimed is:1. A method for fabricating semiconductor device, comprising:forming fin-shaped structures on a substrate, wherein the fin-shaped structures comprise a ring-shaped fin-shaped structure;using isopropyl alcohol (IPA) to perform a rinse process;performing a baking process;forming a gate oxide layer on the fin-shaped structures; andperforming a fin cut process to cut the ring-shaped fin-shaped structure after forming the gate oxide layer.
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