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Source and drain surface treatment for multi-gate field effect transistors

專利號(hào)
US10868149B2
公開日期
2020-12-15
申請(qǐng)人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Wei-Han Fan; Wei-Yuan Lu; Yu-Lin Yang; Chun-Hsiang Fan; Sai-Hooi Yeong
IPC分類
H01L29/66; H01L29/08; H01L21/02; H01L21/265; H01L21/3065; H01L29/78; H01L21/225; H01L21/311; H01L21/306
技術(shù)領(lǐng)域
fin,in,gate,layer,etching,drain,isolation,liner,silicon,channel
地域: Hsin-Chu

摘要

A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.

說明書

Still referring to FIG. 2, the fin 110 includes two source/drain (S/D) regions 110a and a channel region 110b between the two S/D regions 110a. The S/D regions 110a and the channel region 110b are arranged horizontally along the “y” direction. In the illustrated embodiment, the fin 110 has a substantially rectangular profile in the “x-z” plane. The width of the fin 110 along the “x” direction is denoted as Wfin. The fin 110 has a height Hfin above the isolation structure 112 along the “z” direction. In alternative embodiments, the fin 110 has a trapezoidal profile in the “x-z” plane, and the fin width Wfin is measured at the middle (Hfin/2) of the fin 110. In embodiments, the fin width Wfin may be 10 nanometers (nm) or smaller, such as 6 nm or smaller. In embodiments, the fin height Hfin may be equal to or greater than 30 nm, such as 40 nm or greater, or even 50 nm.

權(quán)利要求

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