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Source and drain surface treatment for multi-gate field effect transistors

專利號
US10868149B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Wei-Han Fan; Wei-Yuan Lu; Yu-Lin Yang; Chun-Hsiang Fan; Sai-Hooi Yeong
IPC分類
H01L29/66; H01L29/08; H01L21/02; H01L21/265; H01L21/3065; H01L29/78; H01L21/225; H01L21/311; H01L21/306
技術領域
fin,in,gate,layer,etching,drain,isolation,liner,silicon,channel
地域: Hsin-Chu

摘要

A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor material and has a source region, a channel region, and a drain region for a transistor; forming a gate stack over the channel region; performing a surface treatment to the fin in the source and drain regions, thereby converting an outer portion of the fin in the source and drain regions into a different material other than the first semiconductor material; etching the converted outer portion of the fin in the source and drain regions, thereby reducing a width of the fin in the source and drain regions; and depositing an epitaxial layer over the fin in the source and drain regions.

說明書

The device 100 post the operation 20 is shown in FIGS. 5, 6A, and 6B collectively. FIG. 6A is a cross-sectional view of the trimmed S/D regions 110a along the A-A′ line of FIG. 5. FIG. 6B is a cross-sectional view of the fin 110 along the B-B′ line of FIG. 5. Referring to FIG. 6A, the fin 110 in the S/D regions 110a is trimmed to have a new width Wfin2 that is smaller than Wfin. In some embodiments, as discussed above, the converted exterior layer 124 has a wider thickness around the center height of the fin 110 than around top and bottom of the fin 110. After the removing of the converted exterior layer 124, the sidewalls of the fin 110 curve in towards the center, as illustrated in the FIG. 6A. For clarity, the Wfin2 is measured at half height of the fin 110 (Hfin2/2). Similarly, the surface 123 of the exposed portion of the fin 110 in the channel region 110b may also curve in under the dummy gate stacked 120.

權利要求

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