The conductive layer 116a may include one or more metal layers, such as work function metal layer(s), conductive barrier layer(s), and metal fill layer(s). The work function metal layer may be a p-type or an n-type work function layer depending on the type (p-type or n-type) of the transistor. The p-type work function layer comprises a metal selected from but not restricted to the group of titanium nitride (TiN), tantalum nitride (TaN), ruthenium (Ru), molybdenum (Mo), tungsten (W), platinum (Pt), or combinations thereof. The n-type work function layer comprises a metal selected from but not restricted to the group of titanium (Ti), aluminum (Al), tantalum carbide (TaC), tantalum carbide nitride (TaCN), tantalum silicon nitride (TaSiN), titanium silicon nitride (TiSiN), or combinations thereof. The metal fill layer may include aluminum (Al), tungsten (W), cobalt (Co), and/or other suitable materials. The conductive layer 116a may be deposited using methods such as CVD, PVD, plating, and/or other suitable processes.

At operation 30, the method 10 (FIG. 1) performs further steps to complete the fabrication of the device 100. For example, operation 30 may form a gate contact electrically connecting the gate stack 120a, and may form metal interconnects connecting the multi-gate FET to other portions of the device 100 to form a complete IC.