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Highly strained source/drain trenches in semiconductor devices

專利號
US10868166B2
公開日期
2020-12-15
申請人
Ta-Wei Kao; Shiang-Bau Wang; Ming-Jie Huang; Chi-Hsi Wu; Shu-Yuan Ku(TW Hsin-Chu)
發(fā)明人
Ta-Wei Kao; Shiang-Bau Wang; Ming-Jie Huang; Chi-Hsi Wu; Shu-Yuan Ku
IPC分類
H01L29/76; H01L29/78; H01L29/66
技術(shù)領(lǐng)域
transistor,etch,sccm,overetch,silicon,opening,substrate,br,undercut,etching
地域: Sijhih

摘要

A semiconductor device is formed by a multi-step etching process that produces trench openings in a silicon substrate immediately adjacent transistor gate structures formed over the substrate surface. The multi-step etching process is a Br-based etching operation with one step including nitrogen and a further step deficient of nitrogen. The etching process does not attack the transistor structure and forms the openings. The openings are bounded by upper surfaces that extend downwardly from the substrate surface and are substantially vertical, and lower surfaces that bulge outwardly from the upper vertical sections and undercut the transistor structure. The openings may be filled with a suitable source/drain material to produce SSD transistors with desirable Idsat characteristics.

說明書

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This description of the exemplary embodiments is intended to be read in connection with the figures of the accompanying drawing, which are to be considered part of the entire written description. In the description, relative terms such as “l(fā)ower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation. Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.

Although the invention has been described in terms of exemplary embodiments, it is not limited thereto. Rather, the appended claims should be construed broadly, to include other variants and embodiments of the invention, which may be made by those skilled in the art without departing from the scope and range of equivalents of the invention.

權(quán)利要求

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