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Vertical power devices with oxygen inserted Si-layers

專利號
US10868172B2
公開日期
2020-12-15
申請人
Infineon Technologies Austria AG(AT Villach)
發(fā)明人
Oliver Blank; Thomas Feil; Maximilian Roesch; Martin Poelzl; Robert Haase; Sylvain Leomant; Bernhard Goller; Andreas Meiser
IPC分類
H01L29/78; H01L21/76; H01L21/02; H01L21/3063; H01L21/768; H01L29/08; H01L29/10; H01L29/66
技術(shù)領(lǐng)域
trench,si,diffusion,doped,contact,barrier,oxygen,region,body,layers
地域: Villach

摘要

A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.

說明書

Spatially relative terms such as “under”, “below”, “l(fā)ower”, “over”, “upper” and the like, are used for ease of description to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures. Further, terms such as “first”, “second”, and the like, are also used to describe various elements, regions, sections, etc. and are also not intended to be limiting. Like terms refer to like elements throughout the description.

As used herein, the terms “having”, “containing”, “including”, “comprising” and the like are open-ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. The articles “a”, “an” and “the” are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

With the above range of variations and applications in mind, it should be understood that the present invention is not limited by the foregoing description, nor is it limited by the accompanying drawings. Instead, the present invention is limited only by the following claims and their legal equivalents.

權(quán)利要求

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