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Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

專利號(hào)
US10868173B2
公開日期
2020-12-15
申請(qǐng)人
Infineon Technologies Austria AG（AT Villach）
發(fā)明人
Cedric Ouvrard; Adam Amali; Oliver Blank; Michael Hutzler; David Laforet; Harsh Naik; Ralf Siemieniec; Li Juin Yip
IPC分類
H01L29/78; H01L29/66; H01L29/739; H01L29/40; H01L29/06; H01L29/10
技術(shù)領(lǐng)域
spicular,doping,region,drift,trenches,trench,153a,area,substrate,in
地域： Villach

摘要

A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.

說明書

An active transistor cell 107 additionally includes a body region 152 which forms a first pn-junction with the drift region 153. The source region 151 is formed at the first side 101 of the semiconductor substrate 100 and forms a second pn-junction with the body region 152. The first pn-junction between the body region 152 and the drift region 153 is the main pn-junction while the second pn-junction between the body region 152 and the source region 151 is typically short-circuited by a body contact. The source region 151 is a highly n-doped region indicated in FIG. 3 by “n+”. The body region 152 is a p-doped region as indicated in FIG. 3 by “p”.

As shown in FIG. 3, the spicular trenches 130 extend much deeper into the semiconductor substrate 100 than the body region 152. Therefore, the cell mesa region 120 between adjacent spicular trenches 130 is a narrow region which can be easily depleted by supplying a source potential to the needle electrodes 131.

權(quán)利要求

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