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Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

專利號
US10868173B2
公開日期
2020-12-15
申請人
Infineon Technologies Austria AG(AT Villach)
發(fā)明人
Cedric Ouvrard; Adam Amali; Oliver Blank; Michael Hutzler; David Laforet; Harsh Naik; Ralf Siemieniec; Li Juin Yip
IPC分類
H01L29/78; H01L29/66; H01L29/739; H01L29/40; H01L29/06; H01L29/10
技術(shù)領(lǐng)域
spicular,doping,region,drift,trenches,trench,153a,area,substrate,in
地域: Villach

摘要

A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.

說明書

The needle electrodes 132, the source regions 151 and the body regions 152 are electrically connected to a source metallization which is schematically shown in FIG. 3 as being connected with a terminal L. Thus, the same voltage, or electrical potential, is applied to the source regions 151, the body regions 152 and the needle electrodes 132. The gate electrodes 141 are electrically connected to a gate terminal G.

FIG. 3 illustrates that only the field electrodes 131 in the active area 104 are electrically connected to the source metallization. The field electrodes 131 in the edge termination area 110 are illustrated as electrically disconnected from the source metallization. Each of the field electrodes 131 in the edge termination area 110 can be, for example, electrically connected to a floating p-region formed in the edge termination area 110 at the first side 101 of the semiconductor substrate 100. Another option is to electrically connect the field electrodes 131 in the edge termination area 110 to the source metallization so that all field electrodes 131 in the active area 104 and in the edge termination area 110 are at source potential. It would also be possible to electrically connect only a portion of the field electrodes 131 in the edge termination area 110 with a source metallization while other field electrodes 131 in the edge termination area 110 are electrically insulated from the source metallization.

權(quán)利要求

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