FIG. 8A illustrates a vertical cross-section through the semiconductor substrate 100 showing a plurality of spicular trenches 130 each having a needle electrode 131 and a field oxide 132. The needle electrode 133 is electrically connected to a source contact line 195 by respective needle contact 133.

FIG. 8B illustrates a plan view onto the first side 101 of the semiconductor substrate 100. A large source metallization 195 is formed in the active area 104 and basically completely covers the active area 104 when seen in plan projection onto the first side 101. For illustration purposes only, the source metallization 195 is partially removed to show the spicular trenches 130 and the gate electrodes 141 in the active area 104. The source contact lines 196 laterally extend from the source metallization 195 to provide an ohmic connection for all, or selected, needle electrodes in the edge termination area 110.

Along an outer region of the semiconductor substrate 100 between the most outer spicular trenches 130 and the lateral rim 103, a gate runner 190 is formed. Gate contact lines 191, which may also be referred to as gate fingers, laterally extend from the gate runner 190 to be in ohmic connection with the gate electrodes 141 at gate contacts 192.